The QSTTM substrate*1, a 300-mm GaN growth substrate that Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh; hereinafter, “Shin-Etsu Chemical”) developed, has been adopted for the 300-mm GaN power device development program at IMEC*2, where sample evaluation is in progress. In the evaluation, the 5 µm-thick HEMT*3 device using a QSTTM substrate achieved a record-breaking voltage resistance exceeding 650 V for a 300mm substrate. Shin-Etsu Chemical, licensed by QROMIS...