Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its lineup with the launch of “IX800FXF2YMS4,” a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy power generation systems and power conversion systems. The new module features Toshiba’s third-generation silicon carbide (SiC) MOSFET chips, a drain-source voltage rating of 3300V and a drain current (DC) rating of 800A. Its specifications state an I ² t limit value in the diode section, an indicator of surge current capability.

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Toshiba: IX800FXF2YMS4, a 3300V, 800A dual SiC MOSFET module with 300kA²s I²t capability for industrial equipment.

Manufacturers of industrial equipment, including railway traction inverters and converters, renewable energy power generation systems, and industrial motor control equipment, must constantly meet increasing demands for higher efficiency, smaller size and improved reliability. In these systems, large surge currents that can flow through power semiconductor modules in abnormal conditions must be countered by a sufficient surge current capability.

IX800FXF2YMS4 has an optimized SiC chip design and delivers an I ² t characteristic of 300kA ² s ^[1] , an indicator of the diode section’s surge current capability under abnormal conditions.

The module has a drain-source on-voltage (sense) (V _DS(on)sense ) of 1.4V (typ.) ^[2] , which helps reduce conduction losses. Its turn-on switching loss (E _on ) of 185mJ (typ.) ^[3] and turn-off switching loss (E _off ) of 175mJ (typ.) ^[3] help reduce switching losses. These characteristics contribute to improved equipment reliability and efficiency, and to smaller cooling systems.

The new product adopts the iXPLV™ package ^[4] , which offers excellent mounting compatibility. It uses silver sintering bonding technology to improve the heat resistance and reliability of bonded sections with SiC chips, achieving the 175°C channel temperature rating required for industrial equipment.

This new addition to Toshiba’s lineup brings the number of SiC MOSFET modules in the iXPLV™ package to four, broadening the range of available product options.

Toshiba will continue to expand its lineup of SiC MOSFET modules for industrial equipment and provide a wider range of product options that meet diverse equipment specifications and applications. The company will also contribute to more reliable, efficient and compact industrial equipment.

Notes:

[1] Test conditions: T _ch(initial) =175°C, V _GS =-6V, half sine-wave 10ms 1pulse, F.R.=1%

[2] Test conditions: I _D =800A, V _GS =+20V, T _ch =25°C

[3] Test conditions: V _DD =1800V, I _D =800A, V _GS =+20V/-6V, C _gs =100nF, R _G(on) =1.2Ω, R _G(off) =1.2Ω, T _ch =175°C, L _S ≃70nH

[4] iXPLV ^TM : Abbreviation for intelligent fleXible Package Low Voltage

Applications

Industrial equipment

Note:

[5] SST: A next-generation transformer that utilizes power semiconductors to achieve compact size, highly efficient voltage conversion, and advanced power control.

Features

Main Specifications

(T _c =25°C, unless otherwise specified)

Part number

IX800FXF2YMS4

Package

Name

iXPLV™

Size (mm)

Typ.

144×99.5×40

Absolute

maximum

ratings

Drain-source voltage V _DSS (V)

3300

Gate-source voltage V _GSS (V)

+25/-10

Drain current (DC) I _D (A)

800

Drain current (pulsed) I _DP (A)

1600

Channel temperature T _ch (°C)

175

Isolation voltage V _isol

(Vrms)

AC, 60s

6000

I2t limit value (Diode) I ² t

(kA ² s)

T _ch(initial) =175°C, V _GS =-6V,

half sine-wave 10ms 1pulse,

F.R.=1%

300

Electrical

characteristics

Drain-source on-voltage (sense)

V _DS(on)sense (V)

I _D =800A, V _GS =+20V,

T _ch =25°C

Typ.

1.4

Source-drain on-voltage (sense)

V _SD(on)sense (V)

I _S =800A, V _GS =+20V,

T _ch =25°C

Typ.

1.4

Source-drain off-voltage (sense)

V _SD(off)sense (V)

I _S =800A, V _GS =-6V,

T _ch =25°C

Typ.

2.2

Stray inductance L _sPN (nH)

P terminal-N terminal

Typ.

12

Turn-on switching loss

E _on (mJ)

V _DD =1800V, I _D =800A,

V _GS =+20V/-6V,

C _gs =100nF, R _G(on) =1.2Ω,

R _G(off) =1.2Ω, T _ch =175°C,

L _S ≃70nH

Typ.

185

Turn-off switching loss

E _off (mJ)

Typ.

175

Follow the link below for more on the new product.

IX800FXF2YMS4

Follow the link below for more on Toshiba’s SiC power device lineup.

SiC Power Devices

* iXPLV™ is a trademark of Toshiba Electronic Devices & Storage Corporation.

* Other company names, product names, and service names may be trademarks of their respective companies.

* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

About Toshiba Electronic Devices & Storage Corporation

Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.

Its 17,400 employees around the world share a determination to maximize product value, and to promote close collaboration with customers in the co-creation of value and new markets. The company looks forward to building and to contributing to a better future for people everywhere.

Find out more at https://toshiba.semicon-storage.com/ap-en/top.html

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